Paper Titles

Defect Study on Si Implanted with B and BF₂ Ions by Coincidence Doppler Broadening Measurements
p.469

Positron Annihilation in Si and Si-Related Materials in Thermal Equilibrium at High Temperature
p.472

Defect Property in He⁺ Implanted Silicon Probed by Slow Positron Beam
p.475

GaN Thin Films on SiC Substrates Studied Using Variable Energy Positron Annihilation Spectroscopy
p.478

Determination of Structural Vacancy Densities in Icosahedral Quasicrystals by Slow Positron Beam Technique
p.481

Depth-Dependence Recovery of Helium-Implanted 18 Carats Gold-Silver Alloy
p.484

Positron Dechanneling by Electronic and Nuclear Scattering
p.487

The Estimation of the Vacancy-Type Defects Density in Thin Fe Film with Slow Positron Beam
p.490

Positron Annihilation in Gaseous Nitrided Cold-Rolled FeNiTi Films
p.493

HomeMaterials Science ForumMaterials Science Forum Vols. 363-365Determination of Structural Vacancy Densities in...

Determination of Structural Vacancy Densities in Icosahedral Quasicrystals by Slow Positron Beam Technique

Article Preview

Abstract:

You might also be interested in these eBooks

Positron Annihilation - ICPA-12

Info:

Periodical:

Materials Science Forum (Volumes 363-365)

Pages:

481-483

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.363-365.481

Citation:

Cite this paper

Online since:

April 2001

Authors:

K. Sato, H. Uchiyama, Y. Takahashi, Ikuzo Kanazawa, R. Tamura, Kaoru Kimura, F. Komori, Ryoichi Suzuki, Toshiyuki Ohdaira, Shin Takeuchi

Keywords:

Quasicrystal, Slow Positron Beam, Structural Vacancy Density

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2001 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: