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HomeMaterials Science ForumMaterials Science Forum Vols. 363-365GaN Thin Films on SiC Substrates Studied Using...

GaN Thin Films on SiC Substrates Studied Using Variable Energy Positron Annihilation Spectroscopy

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Periodical:

Materials Science Forum (Volumes 363-365)

Pages:

478-480

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.363-365.478

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Online since:

April 2001

Authors:

Y.F. Hu, Y.Y. Shan, C.D. Beling, S. Fung, M.H. Xie, S.H. Cheung, J. Tu, Gerhard Brauer, W. Anwand, D.S.Y. Tong

Keywords:

Gallium Nitride (GaN), Heterojunction, Positron Beams, Silicon Carbide (SiC)

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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