Defect Study on Si Implanted with B and BF2 Ions by Coincidence Doppler Broadening Measurements

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Periodical:

Materials Science Forum (Volumes 363-365)

Edited by:

Werner Triftshäuser, Gottfried Kögel and Peter Sperr

Pages:

469-471

DOI:

10.4028/www.scientific.net/MSF.363-365.469

Citation:

T. Akahane et al., "Defect Study on Si Implanted with B and BF2 Ions by Coincidence Doppler Broadening Measurements", Materials Science Forum, Vols. 363-365, pp. 469-471, 2001

Online since:

April 2001

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$35.00

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