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HomeMaterials Science ForumMaterials Science Forum Vols. 363-365Defect Property in He+ Implanted Silicon Probed by...

Defect Property in He⁺ Implanted Silicon Probed by Slow Positron Beam

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Periodical:

Materials Science Forum (Volumes 363-365)

Pages:

475-477

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.363-365.475

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Online since:

April 2001

Authors:

X.Y. Zhou, T.H. Zhang, X.F. Zhang, Hui Min Weng, Y.M. Fan, J.F. Du, Rong Dian Han

Keywords:

Defect, He⁺ Implanted Si, S Parameter, Slow Positron Beam

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© 2001 Trans Tech Publications Ltd. All Rights Reserved

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