Defect Property in He+ Implanted Silicon Probed by Slow Positron Beam

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Periodical:

Materials Science Forum (Volumes 363-365)

Edited by:

Werner Triftshäuser, Gottfried Kögel and Peter Sperr

Pages:

475-477

Citation:

X.Y. Zhou et al., "Defect Property in He+ Implanted Silicon Probed by Slow Positron Beam", Materials Science Forum, Vols. 363-365, pp. 475-477, 2001

Online since:

April 2001

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