Paper Titles

Temperature Dependence of the Capture Cross Section of Se^o as Measured by Microwave Absorption Spectroscopy (MAS)
p.469

Metastable Thermal Donor States in Germanium Identified by Far-IR Spectroscopy
p.473

A Metastable Precursor to the Di-Carbon Centre in Crystalline Silicon
p.481

The Bistability of Thermal Donors in Silicon Investigated by Infrared Spectroscopy
p.487

Pressure Studies of 'Resonant' Metastable Localized Electron State in Heavilly Doped O-GaAs
p.493

Entropy-Driven Metastable Defects in Silicon
p.499

Chemical Trends in II-VI Semiconductors Doped with 3d Impurities
p.505

Electrical Properties of Twinned ZnSe: P-Type Conductivity and Chaos
p.513

Deep Levels due to Transition Metal Impurities in CdTe
p.519

HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Pressure Studies of 'Resonant' Metastable...

Pressure Studies of 'Resonant' Metastable Localized Electron State in Heavilly Doped O-GaAs

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 15

Info:

Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

493-498

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.493

Citation:

Cite this paper

Online since:

January 1989

Authors:

L. Dmowski, Dariusz Wasik, E. Litwin-Staszewska, T. Suski, P. Wiśniewski, W.H. Zhuang

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1989 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: