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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41

Materials Science Forum Vols. 38-41

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41

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Table of Contents

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Paper Title Page

Preface

Impact of Defects on the Technology of Highly Integrated Circuits

Authors: Bernd O. Kolbesen, Werner Bergholz, H. Wendt

1

Defects and Future Semiconductor Devices

Authors: D.V. Lang

13

Configurations and Properties of Hydrogen in Crystalline Semiconductors

Authors: Stephen J. Pearton, Michael Stavola, James W. Corbett

25

Defect Metastability and Bistability

Authors: G.D. Watkins

39

The EL2 Defect in GaAs

Authors: Jaroslaw Dąbrowski, Matthias Scheffler

51

Magneto-Optical and ODMR Investigations on Intrinsic and Extrinsic Defects in GaAs

Authors: B.K. Meyer

59

Defects Induced by Reactive Ion Etching (RIE) in GaAs and Correlation with EL2

Authors: Toshiyuki Ikoma, Yukito Hagihara

67

ESR-Spectra of Defects in Plastically Deformed GaAs

Authors: M. Wattenbach, Joachim Krüger, Christian Kisielowski-Kemmerich, H. Alexander

73

The Temperature Dependence of the Hole Ionization Cross Section of EL2 in GaAs

Authors: P. Omling, P. Silverberg, L. Samuelson

79

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