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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41

Materials Science Forum Vols. 38-41

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41

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Table of Contents

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Paper Title Page

Defects in High-Dose Oxygen Implanted Silicon

Authors: A. De Veirman, K. Yallup, J. Van Landuyt, H.E. Maes

207

Conventional and Rapid Thermal Annealing Induced Defects in Czochralski Silicon

Authors: E. Susi, Antonella Poggi, R. Fabbri, Giorgio Lulli, A.G. Adegboyega

213

Quenched-In Defects in Thermally Treated and Pulsed Laser Irradiated Silicon

Authors: Kenshiro Nakashima

219

Effects of Boron Doping on the Annealing Characteristics of Cz-Silicon

Authors: Werner Puff, Peter Mascher, D. Kerr, S. Dannefaer

225

Influence of Hydrostatic Pressure on Deep Levels in Silicon Induced by Annealing

Authors: V. Smid, Jan Zeman, J. Kristofik, J.J. Mares, Yu.V. Vyzhigin, V.A. Kostylev, N.A. Sobolev, V.V. Eliseev, V.M. Likunova

231

Impact of Volume Defects on Gold Gettering in Cz-Si Wafers

Authors: F.G. Kirscht, K. Schmalz, I. Babanskaya

237

Parallel Stress and Perpendicular Strain Depth-Distributions in [001] Silicon Amorphized by Ion Implantation

Authors: F. Cembali, R. Fabbri, P. Negrini, Marco Servidori, A. Zani

243

Defects in Amorphous Silicon

Authors: Sokrates T. Pantelides

249

Theory of 4d Transition-Metal Ions in Silicon: Total-Energies, Diffusion, Electronic and Magnetic Properties

Authors: Franz Beeler, Matthias Scheffler

257

Green's-Function Calculation of the Formation Entropy of a Vacancy in Silicon

Authors: J.R. Leite, E.C.F. da Silva, A. Dal Pino

263

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