Paper Titles

Influence of Defects on the Impurity Diffusion in SIMOX Structures
p.201

Defects in High-Dose Oxygen Implanted Silicon
p.207

Conventional and Rapid Thermal Annealing Induced Defects in Czochralski Silicon
p.213

Quenched-In Defects in Thermally Treated and Pulsed Laser Irradiated Silicon
p.219

Effects of Boron Doping on the Annealing Characteristics of Cz-Silicon
p.225

Influence of Hydrostatic Pressure on Deep Levels in Silicon Induced by Annealing
p.231

Impact of Volume Defects on Gold Gettering in Cz-Si Wafers
p.237

Parallel Stress and Perpendicular Strain Depth-Distributions in [001] Silicon Amorphized by Ion Implantation
p.243

Defects in Amorphous Silicon
p.249

HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Effects of Boron Doping on the Annealing...

Effects of Boron Doping on the Annealing Characteristics of Cz-Silicon

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 15

Info:

Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

225-230

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.225

Citation:

Cite this paper

Online since:

January 1989

Authors:

Werner Puff, Peter Mascher, D. Kerr, S. Dannefaer

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1989 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: