Parallel Stress and Perpendicular Strain Depth-Distributions in [001] Silicon Amorphized by Ion Implantation

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Periodical:

Materials Science Forum (Volumes 38-41)

Edited by:

G. Ferenczi

Pages:

243-248

DOI:

10.4028/www.scientific.net/MSF.38-41.243

Citation:

F. Cembali et al., "Parallel Stress and Perpendicular Strain Depth-Distributions in [001] Silicon Amorphized by Ion Implantation", Materials Science Forum, Vols. 38-41, pp. 243-248, 1989

Online since:

January 1991

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