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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Parallel Stress and Perpendicular Strain...

Parallel Stress and Perpendicular Strain Depth-Distributions in [001] Silicon Amorphized by Ion Implantation

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

243-248

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.243

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Online since:

January 1989

Authors:

F. Cembali, R. Fabbri, P. Negrini, Marco Servidori, A. Zani

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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