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Green's-Function Calculation of the Formation Entropy of a Vacancy in Silicon
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Equilibrium Geometries and Electronic Structure of Oxygen Related Defects in Silicon
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Screening of the Coulomb Interaction and Transition Metal Energy Levels Pinning to the Semiconductor Neutrality Level
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Equilibrium Geometries and Electronic Structure of...

Equilibrium Geometries and Electronic Structure of Oxygen Related Defects in Silicon

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

269-274

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.269

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Online since:

January 1989

Authors:

P.J. Kelly

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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