Defects in Amorphous Silicon
p.249
p.249
Theory of 4d Transition-Metal Ions in Silicon: Total-Energies, Diffusion, Electronic and Magnetic Properties
p.257
p.257
Green's-Function Calculation of the Formation Entropy of a Vacancy in Silicon
p.263
p.263
Equilibrium Geometries and Electronic Structure of Oxygen Related Defects in Silicon
p.269
p.269
Screening of the Coulomb Interaction and Transition Metal Energy Levels Pinning to the Semiconductor Neutrality Level
p.275
p.275
One- and Two-Oxygen Defects in Silicon - A Theoretical Study
p.281
p.281
Localized Resonant State and Its Appearance in Energy Gap in Pressurized GaAs
p.287
p.287
Computation of Hyperfine Interactions for Substitutional Se+and S+ Impurities in Silicon
p.293
p.293
Parameter-Free Calculations of the Pressure Dependence of Impurity Levels, Entropies and of Defect-Formation Volumes
p.299
p.299
Screening of the Coulomb Interaction and Transition Metal Energy Levels Pinning to the Semiconductor Neutrality Level
Abstract:
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Periodical:
Materials Science Forum (Volumes 38-41)
Pages:
275-280
Citation:
Online since:
January 1989
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© 1989 Trans Tech Publications Ltd. All Rights Reserved
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