Paper Titles

Screening of the Coulomb Interaction and Transition Metal Energy Levels Pinning to the Semiconductor Neutrality Level
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One- and Two-Oxygen Defects in Silicon - A Theoretical Study
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Localized Resonant State and Its Appearance in Energy Gap in Pressurized GaAs
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Computation of Hyperfine Interactions for Substitutional Se⁺and S⁺ Impurities in Silicon
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Parameter-Free Calculations of the Pressure Dependence of Impurity Levels, Entropies and of Defect-Formation Volumes
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Detecting the Dynamic Aspect of the Jahn-Teller Coupling for the V³ Defect in GaAs
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Electronic Structure of Nitrogen NN-Pairs in GaP from Excitation and Zeeman Spectroscopy
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Localized Defect States in Tetrahedrally Bonded Semiconductors
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Cluster Ab Initio Calculation of the Localized Lattice Excitations due to Interstitial Oxygen in Silicon
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Parameter-Free Calculations of the Pressure...

Parameter-Free Calculations of the Pressure Dependence of Impurity Levels, Entropies and of Defect-Formation Volumes

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

299-304

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.299

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Online since:

January 1989

Authors:

D. Weider, Matthias Scheffler, Udo Scherz

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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