Paper Titles

Localized Resonant State and Its Appearance in Energy Gap in Pressurized GaAs
p.287

Computation of Hyperfine Interactions for Substitutional Se⁺and S⁺ Impurities in Silicon
p.293

Parameter-Free Calculations of the Pressure Dependence of Impurity Levels, Entropies and of Defect-Formation Volumes
p.299

Detecting the Dynamic Aspect of the Jahn-Teller Coupling for the V³ Defect in GaAs
p.305

Electronic Structure of Nitrogen NN-Pairs in GaP from Excitation and Zeeman Spectroscopy
p.311

Localized Defect States in Tetrahedrally Bonded Semiconductors
p.317

Cluster Ab Initio Calculation of the Localized Lattice Excitations due to Interstitial Oxygen in Silicon
p.323

Computation of Structure, Stability and Gap States for Core Models of the Oxygen Thermal Donors in Silicon
p.329

Fluorine-Silicon Reactions and the Etching of Crystalline Silicon
p.335

HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Electronic Structure of Nitrogen NN-Pairs in GaP...

Electronic Structure of Nitrogen NN-Pairs in GaP from Excitation and Zeeman Spectroscopy

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 15

Info:

Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

311-316

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.311

Citation:

Cite this paper

Online since:

January 1989

Authors:

Q.X. Zhao, Bo Monemar

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1989 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: