Paper Titles

One- and Two-Oxygen Defects in Silicon - A Theoretical Study
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Localized Resonant State and Its Appearance in Energy Gap in Pressurized GaAs
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Computation of Hyperfine Interactions for Substitutional Se⁺and S⁺ Impurities in Silicon
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Parameter-Free Calculations of the Pressure Dependence of Impurity Levels, Entropies and of Defect-Formation Volumes
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Detecting the Dynamic Aspect of the Jahn-Teller Coupling for the V³ Defect in GaAs
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Electronic Structure of Nitrogen NN-Pairs in GaP from Excitation and Zeeman Spectroscopy
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Localized Defect States in Tetrahedrally Bonded Semiconductors
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Cluster Ab Initio Calculation of the Localized Lattice Excitations due to Interstitial Oxygen in Silicon
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Computation of Structure, Stability and Gap States for Core Models of the Oxygen Thermal Donors in Silicon
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Detecting the Dynamic Aspect of the Jahn-Teller...

Detecting the Dynamic Aspect of the Jahn-Teller Coupling for the V³ Defect in GaAs

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

305-310

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.305

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Online since:

January 1989

Authors:

Frederick G. Anderson, Frank S. Ham

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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