One- and Two-Oxygen Defects in Silicon - A Theoretical Study

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Periodical:

Materials Science Forum (Volumes 38-41)

Edited by:

G. Ferenczi

Pages:

281-286

DOI:

10.4028/www.scientific.net/MSF.38-41.281

Citation:

P. Deák et al., "One- and Two-Oxygen Defects in Silicon - A Theoretical Study", Materials Science Forum, Vols. 38-41, pp. 281-286, 1989

Online since:

January 1991

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Price:

$35.00

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