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Theory of 4d Transition-Metal Ions in Silicon: Total-Energies, Diffusion, Electronic and Magnetic Properties
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Green's-Function Calculation of the Formation Entropy of a Vacancy in Silicon
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Equilibrium Geometries and Electronic Structure of Oxygen Related Defects in Silicon
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Screening of the Coulomb Interaction and Transition Metal Energy Levels Pinning to the Semiconductor Neutrality Level
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One- and Two-Oxygen Defects in Silicon - A Theoretical Study
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Localized Resonant State and Its Appearance in Energy Gap in Pressurized GaAs
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Computation of Hyperfine Interactions for Substitutional Se⁺and S⁺ Impurities in Silicon
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Parameter-Free Calculations of the Pressure Dependence of Impurity Levels, Entropies and of Defect-Formation Volumes
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Detecting the Dynamic Aspect of the Jahn-Teller Coupling for the V³ Defect in GaAs
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41One- and Two-Oxygen Defects in Silicon - A...

One- and Two-Oxygen Defects in Silicon - A Theoretical Study

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

281-286

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.281

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Online since:

January 1989

Authors:

Peter Deák, L.C. Snyder, James W. Corbett, R.Z. Wu, A. Sólyom

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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