Influence of Hydrostatic Pressure on Deep Levels in Silicon Induced by Annealing
p.231
p.231
Impact of Volume Defects on Gold Gettering in Cz-Si Wafers
p.237
p.237
Parallel Stress and Perpendicular Strain Depth-Distributions in [001] Silicon Amorphized by Ion Implantation
p.243
p.243
Defects in Amorphous Silicon
p.249
p.249
Theory of 4d Transition-Metal Ions in Silicon: Total-Energies, Diffusion, Electronic and Magnetic Properties
p.257
p.257
Green's-Function Calculation of the Formation Entropy of a Vacancy in Silicon
p.263
p.263
Equilibrium Geometries and Electronic Structure of Oxygen Related Defects in Silicon
p.269
p.269
Screening of the Coulomb Interaction and Transition Metal Energy Levels Pinning to the Semiconductor Neutrality Level
p.275
p.275
One- and Two-Oxygen Defects in Silicon - A Theoretical Study
p.281
p.281
Theory of 4d Transition-Metal Ions in Silicon: Total-Energies, Diffusion, Electronic and Magnetic Properties
Abstract:
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Periodical:
Materials Science Forum (Volumes 38-41)
Pages:
257-262
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Online since:
January 1989
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© 1989 Trans Tech Publications Ltd. All Rights Reserved
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