Paper Titles

Conventional and Rapid Thermal Annealing Induced Defects in Czochralski Silicon
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Quenched-In Defects in Thermally Treated and Pulsed Laser Irradiated Silicon
p.219

Effects of Boron Doping on the Annealing Characteristics of Cz-Silicon
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Influence of Hydrostatic Pressure on Deep Levels in Silicon Induced by Annealing
p.231

Impact of Volume Defects on Gold Gettering in Cz-Si Wafers
p.237

Parallel Stress and Perpendicular Strain Depth-Distributions in [001] Silicon Amorphized by Ion Implantation
p.243

Defects in Amorphous Silicon
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Theory of 4d Transition-Metal Ions in Silicon: Total-Energies, Diffusion, Electronic and Magnetic Properties
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Green's-Function Calculation of the Formation Entropy of a Vacancy in Silicon
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Impact of Volume Defects on Gold Gettering in...

Impact of Volume Defects on Gold Gettering in Cz-Si Wafers

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

237-242

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.237

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Online since:

January 1989

Authors:

F.G. Kirscht, K. Schmalz, I. Babanskaya

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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