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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Conventional and Rapid Thermal Annealing Induced...

Conventional and Rapid Thermal Annealing Induced Defects in Czochralski Silicon

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

213-218

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.213

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Online since:

January 1989

Authors:

E. Susi, Antonella Poggi, R. Fabbri, Giorgio Lulli, A.G. Adegboyega

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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