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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Influence of Hydrostatic Pressure on Deep Levels...

Influence of Hydrostatic Pressure on Deep Levels in Silicon Induced by Annealing

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

231-236

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.231

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Online since:

January 1989

Authors:

V. Smid, Jan Zeman, J. Kristofik, J.J. Mares, Yu.V. Vyzhigin, V.A. Kostylev, N.A. Sobolev, V.V. Eliseev, V.M. Likunova

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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