Paper Titles

Green's-Function Calculation of the Formation Entropy of a Vacancy in Silicon
p.263

Equilibrium Geometries and Electronic Structure of Oxygen Related Defects in Silicon
p.269

Screening of the Coulomb Interaction and Transition Metal Energy Levels Pinning to the Semiconductor Neutrality Level
p.275

One- and Two-Oxygen Defects in Silicon - A Theoretical Study
p.281

Localized Resonant State and Its Appearance in Energy Gap in Pressurized GaAs
p.287

Computation of Hyperfine Interactions for Substitutional Se⁺and S⁺ Impurities in Silicon
p.293

Parameter-Free Calculations of the Pressure Dependence of Impurity Levels, Entropies and of Defect-Formation Volumes
p.299

Detecting the Dynamic Aspect of the Jahn-Teller Coupling for the V³ Defect in GaAs
p.305

Electronic Structure of Nitrogen NN-Pairs in GaP from Excitation and Zeeman Spectroscopy
p.311

HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Localized Resonant State and Its Appearance in...

Localized Resonant State and Its Appearance in Energy Gap in Pressurized GaAs

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

287-292

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.287

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Online since:

January 1989

Authors:

Atsushi Oshiyama

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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