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Electronic Structure of Nitrogen NN-Pairs in GaP from Excitation and Zeeman Spectroscopy
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Localized Defect States in Tetrahedrally Bonded Semiconductors
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Cluster Ab Initio Calculation of the Localized Lattice Excitations due to Interstitial Oxygen in Silicon
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Computation of Structure, Stability and Gap States for Core Models of the Oxygen Thermal Donors in Silicon
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Fluorine-Silicon Reactions and the Etching of Crystalline Silicon
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Cluster Ab Initio Calculation of the Localized...

Cluster Ab Initio Calculation of the Localized Lattice Excitations due to Interstitial Oxygen in Silicon

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

323-328

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.323

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Online since:

January 1989

Authors:

C. Kaneta, Hiroshi Yamada-Kaneta, A. Ohsawa

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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