Cluster Ab Initio Calculation of the Localized Lattice Excitations due to Interstitial Oxygen in Silicon

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Periodical:

Materials Science Forum (Volumes 38-41)

Edited by:

G. Ferenczi

Pages:

323-328

DOI:

10.4028/www.scientific.net/MSF.38-41.323

Citation:

C. Kaneta et al., "Cluster Ab Initio Calculation of the Localized Lattice Excitations due to Interstitial Oxygen in Silicon", Materials Science Forum, Vols. 38-41, pp. 323-328, 1989

Online since:

January 1991

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