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Cluster Ab Initio Calculation of the Localized Lattice Excitations due to Interstitial Oxygen in Silicon
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Localized Defect States in Tetrahedrally Bonded...

Localized Defect States in Tetrahedrally Bonded Semiconductors

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

317-322

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.317

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Online since:

January 1989

Authors:

S. Goettig, C.G. Morgan-Pond

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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