Paper Titles

Electronic Structure of Nitrogen NN-Pairs in GaP from Excitation and Zeeman Spectroscopy
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Localized Defect States in Tetrahedrally Bonded Semiconductors
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Cluster Ab Initio Calculation of the Localized Lattice Excitations due to Interstitial Oxygen in Silicon
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Computation of Structure, Stability and Gap States for Core Models of the Oxygen Thermal Donors in Silicon
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Fluorine-Silicon Reactions and the Etching of Crystalline Silicon
p.335

Photothermal Ionization Spectroscopy
p.341

The Electronic Structure of Platinum, Palladium and Nickel in Silicon
p.355

Time Resolved Photoluminescence Measurements on Noble Gas Related Defects in Silicon
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Perturbed Angular Correlation Spectroscopy of In-Li Pairs in Silicon
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Fluorine-Silicon Reactions and the Etching of...

Fluorine-Silicon Reactions and the Etching of Crystalline Silicon

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

335-340

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.335

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Online since:

January 1989

Authors:

Chris G. Van de Walle, F.R. McFeely, Sokrates T. Pantelides

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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