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Vols. 38-41
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Materials Science Forum Vols. 38-41

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41

ToC:

Table of Contents

Paper Title Page

Interstitial Defect Reactions in Silicon
Authors: Lionel C. Kimerling, M.T. Asom, J.L. Benton, P.J. Drevinsky, C.E. Caefer
141
Carbon-Related Processes in Crystalline Silicon
Authors: Gordon Davies
151
Oxygen-Carbon Interactions in Silicon: Photoluminescence Defect Spectrum at 1.06 eV Emission Energy
Authors: W. Kürner, Klaus Thonke, R. Sauer, M.T. Asom, W. Zulehner
159
Peculiarities of Behavior of Irradiated Heat-Treated Si
Authors: V.B. Neimash, V.M. Siratsky, Mikhail G. Sosnin, V.M. Tsmots, V.I. Shakhovtsov, V.L. Shindich, M.G. Mil'vidskii
165
On the Role of Point Defects in Gettering Processes
Authors: Jan Vanhellemont, Cor Claeys
171
The Dominant Recombination Centres in Proton-Irradiated Silicon after Long-Term Annealing
Authors: Marcel W. Hüppi
177
Deep Levels in Silicon as a Result of CoSi2 Formation
Authors: L.W. Lu, G. Groeseneken, L. Van den Hove, Karen Maex
183
Precipitation Phenomena in CMOS Technology
Authors: I. Fàbian, T. Kormàny, K. Erdélyi, E.K. Pal
189
Formation of SiOX Precipitates in Technological Silicon Wafers during Heating Processes: Investigations with Infrared Spectroscopy
Authors: Erzsébet Hild, S. Nouredin, T. Kormàny
195
Influence of Defects on the Impurity Diffusion in SIMOX Structures
Authors: Dimitris Tsoukalas, P. Normand, N. Guillemot
201

Showing 21 to 30 of 242 Paper Titles