A Local Vibration Mode Absorption Study on the Metastability of EL2 Centres in GaAs
p.125
p.125
Generation Process of EL2 Centers in GaAs
p.129
p.129
Characterization of EL2 Level in As-Grown GaAs Prepared by MBE
p.135
p.135
Interstitial Defect Reactions in Silicon
p.141
p.141
Carbon-Related Processes in Crystalline Silicon
p.151
p.151
Oxygen-Carbon Interactions in Silicon: Photoluminescence Defect Spectrum at 1.06 eV Emission Energy
p.159
p.159
Peculiarities of Behavior of Irradiated Heat-Treated Si
p.165
p.165
On the Role of Point Defects in Gettering Processes
p.171
p.171
The Dominant Recombination Centres in Proton-Irradiated Silicon after Long-Term Annealing
p.177
p.177
Carbon-Related Processes in Crystalline Silicon
Abstract:
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Periodical:
Materials Science Forum (Volumes 38-41)
Pages:
151-158
Citation:
Online since:
January 1989
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© 1989 Trans Tech Publications Ltd. All Rights Reserved
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