Paper Titles

Interstitial Defect Reactions in Silicon
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Carbon-Related Processes in Crystalline Silicon
p.151

Oxygen-Carbon Interactions in Silicon: Photoluminescence Defect Spectrum at 1.06 eV Emission Energy
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Peculiarities of Behavior of Irradiated Heat-Treated Si
p.165

On the Role of Point Defects in Gettering Processes
p.171

The Dominant Recombination Centres in Proton-Irradiated Silicon after Long-Term Annealing
p.177

Deep Levels in Silicon as a Result of CoSi₂ Formation
p.183

Precipitation Phenomena in CMOS Technology
p.189

Formation of SiO_X Precipitates in Technological Silicon Wafers during Heating Processes: Investigations with Infrared Spectroscopy
p.195

HomeMaterials Science ForumMaterials Science Forum Vols. 38-41On the Role of Point Defects in Gettering...

On the Role of Point Defects in Gettering Processes

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

171-176

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.171

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Online since:

January 1989

Authors:

Jan Vanhellemont, Cor Claeys

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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