Carbon-Related Processes in Crystalline Silicon
p.151
p.151
Oxygen-Carbon Interactions in Silicon: Photoluminescence Defect Spectrum at 1.06 eV Emission Energy
p.159
p.159
Peculiarities of Behavior of Irradiated Heat-Treated Si
p.165
p.165
On the Role of Point Defects in Gettering Processes
p.171
p.171
The Dominant Recombination Centres in Proton-Irradiated Silicon after Long-Term Annealing
p.177
p.177
Deep Levels in Silicon as a Result of CoSi2 Formation
p.183
p.183
Precipitation Phenomena in CMOS Technology
p.189
p.189
Formation of SiOX Precipitates in Technological Silicon Wafers during Heating Processes: Investigations with Infrared Spectroscopy
p.195
p.195
Influence of Defects on the Impurity Diffusion in SIMOX Structures
p.201
p.201
The Dominant Recombination Centres in Proton-Irradiated Silicon after Long-Term Annealing
Abstract:
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Periodical:
Materials Science Forum (Volumes 38-41)
Pages:
177-182
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Online since:
January 1989
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© 1989 Trans Tech Publications Ltd. All Rights Reserved
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