The Dominant Recombination Centres in Proton-Irradiated Silicon after Long-Term Annealing

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Periodical:

Materials Science Forum (Volumes 38-41)

Edited by:

G. Ferenczi

Pages:

177-182

DOI:

10.4028/www.scientific.net/MSF.38-41.177

Citation:

M. W. Hüppi "The Dominant Recombination Centres in Proton-Irradiated Silicon after Long-Term Annealing", Materials Science Forum, Vols. 38-41, pp. 177-182, 1989

Online since:

January 1991

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