Paper Titles

Infrared-Induced Paramagnetic Centres in GaAs and Properties of Metastable EL2
p.107

Anisotropy and Isotropy of Electric Field Effects for the EL2 and E3 Defects in GaAs
p.113

Correlation Effects in Native Defects in GaAs
p.119

A Local Vibration Mode Absorption Study on the Metastability of EL2 Centres in GaAs
p.125

Generation Process of EL2 Centers in GaAs
p.129

Characterization of EL2 Level in As-Grown GaAs Prepared by MBE
p.135

Interstitial Defect Reactions in Silicon
p.141

Carbon-Related Processes in Crystalline Silicon
p.151

Oxygen-Carbon Interactions in Silicon: Photoluminescence Defect Spectrum at 1.06 eV Emission Energy
p.159

HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Generation Process of EL2 Centers in GaAs

Generation Process of EL2 Centers in GaAs

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

129-134

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.129

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Online since:

January 1989

Authors:

Masashi Suezawa, Koji Sumino, Fumio Orito

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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