Paper Titles

EL2 and the Electronic Structure of the As_Ga-A_Sj Pair in GaAs: The Role of Jahn-Teller Relaxation and Coulomb Interaction
p.91

The EL2 Defect and the Isolated Arsenic Antisite Defect in GaAs
p.97

EL2 - Intracenter Absorption under Hydrostatic Pressure
p.101

Infrared-Induced Paramagnetic Centres in GaAs and Properties of Metastable EL2
p.107

Anisotropy and Isotropy of Electric Field Effects for the EL2 and E3 Defects in GaAs
p.113

Correlation Effects in Native Defects in GaAs
p.119

A Local Vibration Mode Absorption Study on the Metastability of EL2 Centres in GaAs
p.125

Generation Process of EL2 Centers in GaAs
p.129

Characterization of EL2 Level in As-Grown GaAs Prepared by MBE
p.135

HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Anisotropy and Isotropy of Electric Field Effects...

Anisotropy and Isotropy of Electric Field Effects for the EL2 and E3 Defects in GaAs

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

113-118

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.113

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Online since:

January 1989

Authors:

L. Dobaczewski

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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