Paper Titles

Defects Induced by Reactive Ion Etching (RIE) in GaAs and Correlation with EL2
p.67

ESR-Spectra of Defects in Plastically Deformed GaAs
p.73

The Temperature Dependence of the Hole Ionization Cross Section of EL2 in GaAs
p.79

Metastable to Stable EL2 Regeneration via an 'Auger' Mechanism Induced by the Debye Tail
p.85

EL2 and the Electronic Structure of the As_Ga-A_Sj Pair in GaAs: The Role of Jahn-Teller Relaxation and Coulomb Interaction
p.91

The EL2 Defect and the Isolated Arsenic Antisite Defect in GaAs
p.97

EL2 - Intracenter Absorption under Hydrostatic Pressure
p.101

Infrared-Induced Paramagnetic Centres in GaAs and Properties of Metastable EL2
p.107

Anisotropy and Isotropy of Electric Field Effects for the EL2 and E3 Defects in GaAs
p.113

HomeMaterials Science ForumMaterials Science Forum Vols. 38-41EL2 and the Electronic Structure of the AsGa-ASj...

EL2 and the Electronic Structure of the As_Ga-A_Sj Pair in GaAs: The Role of Jahn-Teller Relaxation and Coulomb Interaction

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

91-96

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.91

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Online since:

January 1989

Authors:

G.A. Baraff, M. Schluter, Michel Lannoo

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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