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Materials Science Forum Vols. 38-41

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41

ToC:

Table of Contents

Paper Title Page

Equilibrium Geometries and Electronic Structure of Oxygen Related Defects in Silicon
Authors: P.J. Kelly
269
Screening of the Coulomb Interaction and Transition Metal Energy Levels Pinning to the Semiconductor Neutrality Level
Authors: Jerzy M. Langer, Christian Delerue, Michel Lannoo
275
One- and Two-Oxygen Defects in Silicon - A Theoretical Study
Authors: Peter Deák, L.C. Snyder, James W. Corbett, R.Z. Wu, A. Sólyom
281
Localized Resonant State and Its Appearance in Energy Gap in Pressurized GaAs
Authors: Atsushi Oshiyama
287
Computation of Hyperfine Interactions for Substitutional Se+and S+ Impurities in Silicon
Authors: Harald Overhof, Matthias Scheffler, C.M. Weinert
293
Parameter-Free Calculations of the Pressure Dependence of Impurity Levels, Entropies and of Defect-Formation Volumes
Authors: D. Weider, Matthias Scheffler, Udo Scherz
299
Detecting the Dynamic Aspect of the Jahn-Teller Coupling for the V3 Defect in GaAs
Authors: Frederick G. Anderson, Frank S. Ham
305
Electronic Structure of Nitrogen NN-Pairs in GaP from Excitation and Zeeman Spectroscopy
Authors: Q.X. Zhao, Bo Monemar
311
Localized Defect States in Tetrahedrally Bonded Semiconductors
Authors: S. Goettig, C.G. Morgan-Pond
317
Cluster Ab Initio Calculation of the Localized Lattice Excitations due to Interstitial Oxygen in Silicon
Authors: C. Kaneta, Hiroshi Yamada-Kaneta, A. Ohsawa
323

Showing 41 to 50 of 242 Paper Titles

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