Volumes

Materials Science Forum
Vols. 48-49

Materials Science Forum
Vol. 47

Materials Science Forum
Vol. 46

Materials Science Forum
Vols. 44-45

Materials Science Forum
Vol. 43

Materials Science Forum
Vol. 42

Materials Science Forum
Vols. 38-41

Materials Science Forum
Vol. 37

Materials Science Forum
Vols. 34-36

Materials Science Forum
Vols. 32-33

Materials Science Forum
Vol. 31

Materials Science Forum
Vol. 30

Materials Science Forum
Vol. 29

HomeMaterials Science ForumMaterials Science Forum Vols. 38-41

Materials Science Forum Vols. 38-41

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41

Export:

ToC:

Table of Contents

Paper Title Page

Physical Behaviour of 4d Transition Metal Impurity in Silicon

Authors: Jie Zhou, Xiu Jing Ji, Shu Ying Li, Wu Jian, Ji Lin Gao, Zhi Young Han

457

Level Splitting of the Cd-Ground State in Silicon

Authors: Herbert Wolf, S. Deubler, Doris Forkel-Wirth, F. Meyer, M. Uhrmacher, W. Witthuhn

463

Temperature Dependence of the Capture Cross Section of Se^o as Measured by Microwave Absorption Spectroscopy (MAS)

Authors: T. Pavelka, B. Hemm

469

Metastable Thermal Donor States in Germanium Identified by Far-IR Spectroscopy

Authors: Paul Clauws, J. Vennik

473

A Metastable Precursor to the Di-Carbon Centre in Crystalline Silicon

Authors: S.P. Chappell, Gordon Davies, Edward C. Lightowlers, R.C. Newman

481

The Bistability of Thermal Donors in Silicon Investigated by Infrared Spectroscopy

Authors: J. Hage, P. Wagner

487

Pressure Studies of 'Resonant' Metastable Localized Electron State in Heavilly Doped O-GaAs

Authors: L. Dmowski, Dariusz Wasik, E. Litwin-Staszewska, T. Suski, P. Wiśniewski, W.H. Zhuang

493

Entropy-Driven Metastable Defects in Silicon

Authors: B. Hamilton, Anthony R. Peaker, Sokrates T. Pantelides

499

Chemical Trends in II-VI Semiconductors Doped with 3d Impurities

Authors: K.A. Kikoin, V.I. Sokolov

505

Electrical Properties of Twinned ZnSe: P-Type Conductivity and Chaos

Authors: Gertrude F. Neumark

513