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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41A Metastable Precursor to the Di-Carbon Centre in...

A Metastable Precursor to the Di-Carbon Centre in Crystalline Silicon

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

481-486

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.481

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Online since:

January 1989

Authors:

S.P. Chappell, Gordon Davies, Edward C. Lightowlers, R.C. Newman

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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