A Metastable Precursor to the Di-Carbon Centre in Crystalline Silicon

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Periodical:

Materials Science Forum (Volumes 38-41)

Edited by:

G. Ferenczi

Pages:

481-486

DOI:

10.4028/www.scientific.net/MSF.38-41.481

Citation:

S.P. Chappell et al., "A Metastable Precursor to the Di-Carbon Centre in Crystalline Silicon", Materials Science Forum, Vols. 38-41, pp. 481-486, 1989

Online since:

January 1991

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$35.00

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