Physical Behaviour of 4d Transition Metal Impurity in Silicon

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 38-41)

Edited by:

G. Ferenczi

Pages:

457-462

DOI:

10.4028/www.scientific.net/MSF.38-41.457

Citation:

J. Zhou et al., "Physical Behaviour of 4d Transition Metal Impurity in Silicon", Materials Science Forum, Vols. 38-41, pp. 457-462, 1989

Online since:

January 1991

Export:

Price:

$35.00

In order to see related information, you need to Login.