Paper Titles

Bistability of Iron-Group III Acceptor Pairs in Silicon
p.409

3d-4d Transition Metal Complex Formation in Silicon
p.415

Photoluminescence from Transition Metals in Silicon
p.421

Volume Relaxation and Pressure Coefficients of Interstitial 3d-Defects in Silicon
p.427

Photoluminescence Study of Nickel Doped Silicon
p.433

Tin Related Defect in Electron Irradiated n-Type Silicon Studied by DLTS
p.439

Electron Paramagnetic Resonance Studies of Defects in Indium-Doped Silicon
p.445

Infrared Absorption Studies of the Divacancy in Silicon-New Properties of and Interpretation of the 0.34 eV Peak
p.451

Physical Behaviour of 4d Transition Metal Impurity in Silicon
p.457

HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Photoluminescence Study of Nickel Doped Silicon

Photoluminescence Study of Nickel Doped Silicon

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 15

Info:

Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

433-438

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.433

Citation:

Cite this paper

Online since:

January 1989

Authors:

Maria Helena Nazaré, M.F. Thomaz

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1989 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: