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Paper Titles
Electronic Energy Level of Off-Center Substitutional Nitrogen in Silicon
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The Multiconfigurational Carbon-Antimony Pair in Silicon
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Excitation Spectrum of the Interstitial Iron Donor in Silicon
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Shift and Splittings of Three Palladium-Related Deep Levels in Silicon under Uniaxial Stresses and the Symmetries of Their Corresponding Centers
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Bistability of Iron-Group III Acceptor Pairs in Silicon
p.409
3d-4d Transition Metal Complex Formation in Silicon
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Photoluminescence from Transition Metals in Silicon
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Volume Relaxation and Pressure Coefficients of Interstitial 3d-Defects in Silicon
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Photoluminescence Study of Nickel Doped Silicon
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Bistability of Iron-Group III Acceptor Pairs in...

Bistability of Iron-Group III Acceptor Pairs in Silicon

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

409-414

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.409

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Online since:

January 1989

Authors:

Lucy V.C. Assali, J.R. Leite

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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