Paper Titles

Time Resolved Photoluminescence Measurements on Noble Gas Related Defects in Silicon
p.361

Perturbed Angular Correlation Spectroscopy of In-Li Pairs in Silicon
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Electronic Characterization of Defects in Iron-Doped P-Type Silicon
p.373

Photoluminescence from Defects in Silicon Grown by Molecular Beam Epitaxy
p.379

Electronic Energy Level of Off-Center Substitutional Nitrogen in Silicon
p.385

The Multiconfigurational Carbon-Antimony Pair in Silicon
p.391

Excitation Spectrum of the Interstitial Iron Donor in Silicon
p.397

Shift and Splittings of Three Palladium-Related Deep Levels in Silicon under Uniaxial Stresses and the Symmetries of Their Corresponding Centers
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Bistability of Iron-Group III Acceptor Pairs in Silicon
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Electronic Energy Level of Off-Center...

Electronic Energy Level of Off-Center Substitutional Nitrogen in Silicon

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

385-390

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.385

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Online since:

January 1989

Authors:

Kouichi Murakami, Hitoshi Kuribayashi, Kohzoh Masuda

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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