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The Electronic Structure of Platinum, Palladium and Nickel in Silicon
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Time Resolved Photoluminescence Measurements on Noble Gas Related Defects in Silicon
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Perturbed Angular Correlation Spectroscopy of In-Li Pairs in Silicon
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Electronic Characterization of Defects in Iron-Doped P-Type Silicon
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Photoluminescence from Defects in Silicon Grown by Molecular Beam Epitaxy
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Electronic Energy Level of Off-Center Substitutional Nitrogen in Silicon
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The Multiconfigurational Carbon-Antimony Pair in Silicon
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Excitation Spectrum of the Interstitial Iron Donor in Silicon
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Shift and Splittings of Three Palladium-Related Deep Levels in Silicon under Uniaxial Stresses and the Symmetries of Their Corresponding Centers
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Photoluminescence from Defects in Silicon Grown by...

Photoluminescence from Defects in Silicon Grown by Molecular Beam Epitaxy

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

379-384

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.379

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Online since:

January 1989

Authors:

Edward C. Lightowlers, M.J. Gregson, V. Higgs, S.T. Davey, C.J. Gibbings, C.G. Tuppen

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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