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Photoluminescence from Defects in Silicon Grown by Molecular Beam Epitaxy
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Electronic Energy Level of Off-Center Substitutional Nitrogen in Silicon
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The Multiconfigurational Carbon-Antimony Pair in Silicon
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Excitation Spectrum of the Interstitial Iron Donor in Silicon
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Shift and Splittings of Three Palladium-Related Deep Levels in Silicon under Uniaxial Stresses and the Symmetries of Their Corresponding Centers
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Bistability of Iron-Group III Acceptor Pairs in Silicon
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3d-4d Transition Metal Complex Formation in Silicon
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Photoluminescence from Transition Metals in Silicon
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Volume Relaxation and Pressure Coefficients of Interstitial 3d-Defects in Silicon
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Shift and Splittings of Three Palladium-Related...

Shift and Splittings of Three Palladium-Related Deep Levels in Silicon under Uniaxial Stresses and the Symmetries of Their Corresponding Centers

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

403-408

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.403

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Online since:

January 1989

Authors:

J. Zhou, L. Wang, Xiu-Chen Yao, Guo-Gang Qin

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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