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3d-4d Transition Metal Complex Formation in Silicon
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Photoluminescence from Transition Metals in Silicon
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Volume Relaxation and Pressure Coefficients of Interstitial 3d-Defects in Silicon
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Photoluminescence Study of Nickel Doped Silicon
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Tin Related Defect in Electron Irradiated n-Type Silicon Studied by DLTS
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-413d-4d Transition Metal Complex Formation in...

3d-4d Transition Metal Complex Formation in Silicon

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

415-420

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.415

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Online since:

January 1989

Authors:

R. Czaputa, M. Midl, H. Feichtinger, Anton J. Bauer

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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