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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Volume Relaxation and Pressure Coefficients of...

Volume Relaxation and Pressure Coefficients of Interstitial 3d-Defects in Silicon

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

427-432

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.427

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Online since:

January 1989

Authors:

H. Feichtinger, T. Prescha

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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