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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41

Materials Science Forum Vols. 38-41

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41

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Table of Contents

Paper Title Page

Correlations between TD Annihilation and Oxygen Precipitation in Czochralski-Grown Silicon

Authors: Manfred Reiche, J. Reichel

643

Influence of Silicide Growth on the Formation Rate of Thermal Donors in Silicon

Authors: D. Mathiot

649

Atomic Geometry and Its Stability of Oxygen Impurities in Silicon

Authors: M. Saito, Atsushi Oshiyama

655

Formation of Oxide Precipitates in Cz Grown Silicon

Authors: J. Seres, Erzsébet Hild

661

New Thermal Donors and Processes Associated with Oxygen Clustering in Cz-Si at 600° C

Authors: K. Schmalz, K. Tittelbach, Valentin V. Emtsev, Yu.N. Daluda

667

Novel Thermal Donors Generated in Cz Silicon by Prolonged Annealing at 470° C

Authors: Y. Kamiura, Fumio Hashimoto, M. Yoneta

673

Defects in Heterostructures and Superlattices

Authors: Didier Stiévenard, S.L. Feng

679

The Atomic Structure of GaAs/AlGaAs Interfaces and Its Correlation with the Optical Properties of Quantum Wells

Authors: A. Ourmazd, J. Cunningham, D.W. Taylor, J.A. Rentschler, C.W. Tu

689

Photoionization of Deep Traps in AlGaAs/GaAs Quantum Wells

Authors: M. Takikawa, K. Kelting, G. Brunthaler, M. Takechi, J. Komeno

695

Zinc and Sulphur in Silicon: Experimental Evidence for Kick-Out Diffusion Behaviour

Authors: Nicolaas Stolwijk, D. Grünebaum, M. Perret, M. Brohl

701