Nitrogen-Carbon-Oxygen Radiative Centers in Silicon: Uniaxial Stress Measurements
p.631
p.631
Local Phonon Coupling Model for Anharmonic Lattice Excitation in Si: O
p.637
p.637
Correlations between TD Annihilation and Oxygen Precipitation in Czochralski-Grown Silicon
p.643
p.643
Influence of Silicide Growth on the Formation Rate of Thermal Donors in Silicon
p.649
p.649
Atomic Geometry and Its Stability of Oxygen Impurities in Silicon
p.655
p.655
Formation of Oxide Precipitates in Cz Grown Silicon
p.661
p.661
New Thermal Donors and Processes Associated with Oxygen Clustering in Cz-Si at 600° C
p.667
p.667
Novel Thermal Donors Generated in Cz Silicon by Prolonged Annealing at 470° C
p.673
p.673
Defects in Heterostructures and Superlattices
p.679
p.679
Atomic Geometry and Its Stability of Oxygen Impurities in Silicon
Abstract:
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Periodical:
Materials Science Forum (Volumes 38-41)
Pages:
655-660
Citation:
Online since:
January 1989
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Сopyright:
© 1989 Trans Tech Publications Ltd. All Rights Reserved
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