Endor Investigations on Heat Treatment Centers in Oxygen Rich Si
p.607
p.607
Thermal Donor Formation in Boron Doped Silicon
p.613
p.613
The Role of Nitrogen in the Formation of Oxygen-Related Thermal Donors in Silicon
p.619
p.619
Calculated Thermodynamic Potentials for the Vacancy and the Oxygen A-Center in Silicon
p.625
p.625
Nitrogen-Carbon-Oxygen Radiative Centers in Silicon: Uniaxial Stress Measurements
p.631
p.631
Local Phonon Coupling Model for Anharmonic Lattice Excitation in Si: O
p.637
p.637
Correlations between TD Annihilation and Oxygen Precipitation in Czochralski-Grown Silicon
p.643
p.643
Influence of Silicide Growth on the Formation Rate of Thermal Donors in Silicon
p.649
p.649
Atomic Geometry and Its Stability of Oxygen Impurities in Silicon
p.655
p.655
Nitrogen-Carbon-Oxygen Radiative Centers in Silicon: Uniaxial Stress Measurements
Abstract:
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Periodical:
Materials Science Forum (Volumes 38-41)
Pages:
631-636
Citation:
Online since:
January 1989
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Сopyright:
© 1989 Trans Tech Publications Ltd. All Rights Reserved
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