Nitrogen-Carbon-Oxygen Radiative Centers in Silicon: Uniaxial Stress Measurements

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Periodical:

Materials Science Forum (Volumes 38-41)

Edited by:

G. Ferenczi

Pages:

631-636

Citation:

A. Dörnen et al., "Nitrogen-Carbon-Oxygen Radiative Centers in Silicon: Uniaxial Stress Measurements", Materials Science Forum, Vols. 38-41, pp. 631-636, 1989

Online since:

January 1991

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$38.00

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