Nitrogen-Carbon-Oxygen Radiative Centers in Silicon: Uniaxial Stress Measurements

Abstract:

Article Preview

Info:

Periodical:

Materials Science Forum (Volumes 38-41)

Edited by:

G. Ferenczi

Pages:

631-636

DOI:

10.4028/www.scientific.net/MSF.38-41.631

Citation:

A. Dörnen et al., "Nitrogen-Carbon-Oxygen Radiative Centers in Silicon: Uniaxial Stress Measurements", Materials Science Forum, Vols. 38-41, pp. 631-636, 1989

Online since:

January 1991

Export:

Price:

$35.00

In order to see related information, you need to Login.