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Correlations between TD Annihilation and Oxygen Precipitation in Czochralski-Grown Silicon
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Influence of Silicide Growth on the Formation Rate of Thermal Donors in Silicon
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Atomic Geometry and Its Stability of Oxygen Impurities in Silicon
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Formation of Oxide Precipitates in Cz Grown Silicon
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New Thermal Donors and Processes Associated with Oxygen Clustering in Cz-Si at 600° C
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Novel Thermal Donors Generated in Cz Silicon by Prolonged Annealing at 470° C
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Defects in Heterostructures and Superlattices
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The Atomic Structure of GaAs/AlGaAs Interfaces and Its Correlation with the Optical Properties of Quantum Wells
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Photoionization of Deep Traps in AlGaAs/GaAs Quantum Wells
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41New Thermal Donors and Processes Associated with...

New Thermal Donors and Processes Associated with Oxygen Clustering in Cz-Si at 600° C

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

667-672

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.667

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Online since:

January 1989

Authors:

K. Schmalz, K. Tittelbach, Valentin V. Emtsev, Yu.N. Daluda

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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