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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41

Materials Science Forum Vols. 38-41

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41

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Paper Title Page

Deep Donor-Acceptor Pair Recombination in Bulk GaP Studied by ODMR and DLTS Techniques

Authors: O.O. Awadelkarim, Marek Godlewski, Bo Monemar

821

High Resolution Measurements of the ³A₂ - ³T₂ Absorption Spectrum in V-Doped GaAs

Authors: Andrzej Wysmolek, Z. Liro, A.M. Hennel

827

Group-IV Impurity Related Centers in GaAs

Authors: V.M.S. Gomes, Ricardo Pintanel, L.M.R. Scolfaro, J.R. Leite, E.A. Menezes

833

The Effect of Deep Electron Traps on Luminescent Properties of VPE Te-Doped GaAs_0.62P_0.38 Epitaxial Layers

Authors: P. Kamiński, Z. Nizinski, Roszkiewicz Roszkiewicz

839

Solubility of the Native Deep-Level Defect Typical of LPE-Grown AlGaAs

Authors: P. Krispin

845

Reduction of Capture Barrier Height of Pressure-Induced Deep Donors (DX Center)in GaAs:Si

Authors: Ming Fu Li, P.Y. Yu, W. Shan, W.L. Hansen, Eicke R. Weber

851

Degeneracy Factor and Pressure Dependence of Si-Induced Deep Impurity States in Al_xGa_1-xAs from Transport Experiments under Hydrostatic Pressure

Authors: S. Azema, V. Mosser, Jean Camassel, R. Piotrzkowski, Jean-Louis Robert, Pierre Gibart, J.-P. Contour, J. Massié, A. Marty

857

Magneto-Optical Investigations on Intrinsic Acceptors in GaAs

Authors: K. Krambrock, B.K. Meyer, Johann Martin Spaeth

863

Photoluminescence Uniaxial Stress Study of Fe₂+ in InP

Authors: Klaus Thonke, Klaus Pressel, H.U. Hermann, Achim Dörnen

869

Optical Absorption and EPR of V₄₊ in GaP

Authors: W. Ulrici, J. Kreissl, D.G. Hayes, L. Eaves, K. Friedland

875