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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41

Materials Science Forum Vols. 38-41

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41

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Paper Title Page

Infrared Study of the Passivation of Zinc Acceptors by Hydrogen in Indium Phosphide

Authors: B. Pajot, Jacques Chevallier, Bertrand Theys, B. Rose

997

Symmetries of Hydrogen-Associated Centers in Silicon

Authors: Brian Bech Nielsen, J. Olajos, Hermann G. Grimmeiss

1003

Hydrogen Passivation of Impurity-Related Defects in Germanium

Authors: Kenji Ito, Ch. Ban, Koichi Mizuno, T. Ito

1009

Off-Axis Motions and Distortions in Acceptor-H Complexes from Uniaxial Stress Studies

Authors: K. Bergman, Michael Stavola, Stephen J. Pearton, J. Lopata, T. Hayes, Hermann G. Grimmeiss

1015

Determination of Energy Level of Atomic H in Crystalline Silicon by Use of Hydrogenation of Radiation Defects

Authors: Yong-Chang Du, Mao-Xun Yan, Guo-Gang Qin

1021

Hydrogenation of GaAs during MBE Growth

Authors: A. Bosacchi, S. Franchi, E. Gombia, R. Mosca, P. Allegri, V. Avanzini, C. Ghezzi

1027

Identification of Microdefects Induced in Si after Hydrogen and Helium Plasma Treatments

Authors: M. Singh, Joerg Weber, T. Zundel, M. Konuma, Hans Cerva

1033

Isotope Studies of the Nature of IR-Active Center in c-Si:H(D)

Authors: B.N. Mukashev, M.F. Tamendarov, S.Z. Tokmoldin

1039

Thermal Stability of Acceptor-Hydrogen Pairs in Silicon

Authors: Manfred Deicher, G. Grübel, R. Keller, E. Recknagel, N. Schulz, H. Skudlik, Th. Wichert

1045

Theory of Phosphorus-Hydrogen Complexes in Passivated Silicon

Authors: Aldo Amore Bonapasta, A. Lapiccirella, N. Tomassini, Mario Capizzi

1051