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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41

Materials Science Forum Vols. 38-41

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41

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Table of Contents

Paper Title Page

The EPR Study of Inhomogeneous Deformations in Neutron-Irradiated Silicon

Authors: A.A. Karanovich, A.V. Dvurechenskii

1175

Formation of Point Defect Clusters by Electron Irradiation in GaP, InAs and InP

Authors: Mitsuji Hirata, Masako Hirata, Seiji Takeda, Michio Kiritani

1181

Formation of Defects in Ion Implanted Silicon during Rapid Isothermal Annealing

Authors: R. Lenhard, S. Luby

1187

Electron-Beam Epitaxy and Superdiffusion in Alloy Semiconductors by Electron-Beam Irradiation

Authors: Takao Wada, Y. Maeda, T. Yamada, Soichiro Kojima, Masaya Ichimura

1193

Positron Annihilation and Tem Study of Lattice Defects of Fusion Neutron Irradiated Silicon

Authors: Ryuichiro Oshima, Motoyoshi Mori, Guo-Chun Hua, Shoichiro Honda, Michio Kiritani, Francisco Eiichi Fujita

1199

Neutrino-Recoil Experiments in Germanium

Authors: M. Brüssler, H. Metzner, R. Sielemann

1205

Overlapping Deep Levels in Electron-Bombarded N-Type Silicon

Authors: Bengt Gunnar Svensson, B.M.S. Larsson, K.-H. Rydén

1211

PAC-Study of Ternary Compound Formation by Ion Implantation

Authors: U. Feuser, R. Vianden, Russell Gwilliam, C. Jeynes, Brian J. Sealy, J.C. Soares

1217

Lattice Location of Ion Implanted Dopants in GaAs Using Radioactive Probes

Authors: S. Winter, S. Blässer, H. Hofsäss, S.G. Jahn, G. Lindner, E. Recknagel

1221

Depth Profile of Neutral Planar Tetravacancies in 3 MeV Phosphorus Implanted Silicon as Studied by EPR

Authors: Yusuke Yajima, Nobuyoshi Natsuaki, Shigeru Nishimatsu

1227