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The Removal Kinetis of Boron and Phosphorus Atoms from Substitutional Site in Si Caused by Interaction with Radiation Defects
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HomeMaterials Science ForumMaterials Science Forum Vols. 38-41Depth Profile of Neutral Planar Tetravacancies in...

Depth Profile of Neutral Planar Tetravacancies in 3 MeV Phosphorus Implanted Silicon as Studied by EPR

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Defects in Semiconductors 15

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Periodical:

Materials Science Forum (Volumes 38-41)

Pages:

1227-1232

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.38-41.1227

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Online since:

January 1989

Authors:

Yusuke Yajima, Nobuyoshi Natsuaki, Shigeru Nishimatsu

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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