Depth Profile of Neutral Planar Tetravacancies in 3 MeV Phosphorus Implanted Silicon as Studied by EPR

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Periodical:

Materials Science Forum (Volumes 38-41)

Edited by:

G. Ferenczi

Pages:

1227-1232

DOI:

10.4028/www.scientific.net/MSF.38-41.1227

Citation:

Y. Yajima et al., "Depth Profile of Neutral Planar Tetravacancies in 3 MeV Phosphorus Implanted Silicon as Studied by EPR", Materials Science Forum, Vols. 38-41, pp. 1227-1232, 1989

Online since:

January 1991

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$35.00

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