PAC-Study of Ternary Compound Formation by Ion Implantation
p.1217
p.1217
Lattice Location of Ion Implanted Dopants in GaAs Using Radioactive Probes
p.1221
p.1221
Depth Profile of Neutral Planar Tetravacancies in 3 MeV Phosphorus Implanted Silicon as Studied by EPR
p.1227
p.1227
Fast Neutron Irradiation Induced Defects in High Purity Germanium
p.1233
p.1233
The Removal Kinetis of Boron and Phosphorus Atoms from Substitutional Site in Si Caused by Interaction with Radiation Defects
p.1239
p.1239
Mössbauer Study of the Electronic and Vibrational Properties of Implanted Te in GaAs and AlxGa1-xAs
p.1245
p.1245
Defects in Silicon after Proton and Electron Irradiation
p.1251
p.1251
Nuclear Magnetic Resonance Field Cycling: A New Defect Spectroscopy for III-V Semiconductors
p.1257
p.1257
Studies of Electron-Hole Recombination Processes at Deep Levels in GaAs and GaP by Means of Transient Optical Absorption Spectroscopy
p.1265
p.1265
The Removal Kinetis of Boron and Phosphorus Atoms from Substitutional Site in Si Caused by Interaction with Radiation Defects
Abstract:
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Periodical:
Materials Science Forum (Volumes 38-41)
Pages:
1239-1244
Citation:
Online since:
January 1989
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Сopyright:
© 1989 Trans Tech Publications Ltd. All Rights Reserved
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