The Removal Kinetis of Boron and Phosphorus Atoms from Substitutional Site in Si Caused by Interaction with Radiation Defects

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Periodical:

Materials Science Forum (Volumes 38-41)

Edited by:

G. Ferenczi

Pages:

1239-1244

DOI:

10.4028/www.scientific.net/MSF.38-41.1239

Citation:

V.D. Akhmetov et al., "The Removal Kinetis of Boron and Phosphorus Atoms from Substitutional Site in Si Caused by Interaction with Radiation Defects", Materials Science Forum, Vols. 38-41, pp. 1239-1244, 1989

Online since:

January 1991

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